bfp620f e7764 jul-03-2003 1 npn silicon germanium rf transistor preliminary data high gain low noise rf transistor small package 1.4 x 0.8 x 0.59 mm outstanding noise figure f = 0.7 db at 1.8 ghz outstanding noise figure f = 1.3 db at 6 ghz maximum stable gain g ms = 21 db at 1.8 ghz g ma = 10.5 db at 6 ghz gold metallization for extra high reliability tsfp-4 1 2 4 3 xys
esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfp620f e7764 r2s 1=b 2=e 3=c 4=e - - tsfp-4 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 2.3 v collector-emitter voltage v ces 7.5 collector-base voltage v cbo 7.5 emitter-base voltage v ebo 1.2 collector current i c 80 ma base current i b 3 total power dissipation 1) t s 98c p tot 185 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 280 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
bfp620f e7764 jul-03-2003 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 2.3 2.8 - v collector-emitter cutoff current v ce = 7.5 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 50 ma, v ce = 1.5 v h fe 100 180 320 -
bfp620f e7764 jul-03-2003 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 60 ma, v ce = 1.5 v, f = 1 ghz f t - 65 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz c cb - 0.12 0.2 pf collector emitter capacitance v ce = 2 v, f = 1 mhz c ce - 0.2 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 0.45 - noise figure i c = 5 ma, v ce = 1.5 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 1.5 v, f = 6 ghz, z s = z sopt f - - 0.7 1.3 - - db power gain, maximum stable 1) i c = 50 ma, v ce = 1.5 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21 - db power gain, maximum available 1) i c = 50 ma, v ce = 1.5 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 10.5 - db transducer gain i c = 50 ma, v ce = 1.5 v, z s = z l = 50 , f = 1.8 ghz i c = 50 ma, v ce = 1.5 v, z s = z l = 50 , f = 6 ghz | s 21e | 2 - - 19.5 9 - - db third order intercept point at output 2) v ce = 2 v, i c = 50 ma, f = 1.8 ghz, z s = z l = 50 ip 3 - 24.5 - dbm 1db compression point at output i c = 50 ma, v ce = 2 v, z s = z l = 50 , f = 1.8 ghz p -1db - 11.5 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 mhz to 6 ghz
bfp620f e7764 jul-03-2003 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transitor chip data: is = 0.22 fa vaf = 1000 v ne = 2- var = 2v nc = 2- rbm = 2.707 cje = 250.7 ff tf = 1.43 ps itf = 2.4 a vjc = 0.6 v tr = 0.2 ns mjs = 0.5 - xti = 3- af = 2 - titf1 -0.0065 - bf = 425 - ikf = 0.25 a br = 50 - ikr = 10 ma rb = 3.129 re = 0.6 - vje = 0.75 v xtf = 10 - ptf = 0 deg mjc = 0.5 - cjs = 128.1 ff nk = -1.42 - fc = 0.8 kf = 7.291e-11 titf2 1.0e-5 nf = 1.025 - ise = 21 fa nr = 1- isc = 18 pa irb = 1.522 ma rc = 2.364 mje = 0.3 - vtf = 1.5 v cjc = 124.9 ff xcjc = 1- vjs = 0.52 v eg = 1.078 ev tnom 298 k all parameters are ready to use, no scalling is necessary. package equivalent circuit: l b0 = 0.22 nh l e0 = 0.28 nh l c0 = 0.22 nh k b0-e0 = 0.1 - k b0-c0 = 0.01 - k e0-c0 = 0.11 - c be = 34 ff c bc = 2 ff c ce = 33 ff l bi = 0.42 nh r lbi = 0.15 l ei = 0.26 nh r lei = 0.11 l ci = 0.35 nh r li = 0.13 k bi-ei = -0.05 - k bi-ci = -0.08 - k ei- c i = 0.2 - to avoid high complexity of the package equivalent circuit, both emitter leads of tsfp-4 are combined in one electrical connection. r lxi are series resistors for the inductances l xi and k xa-yb are the coupling coefficients between the inductances l xa and l yb . valid up to 6ghz
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